| Resonant spin amplification in n-type GaAs |
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| Author(s): Kikkawa JM, Awschalom DD |
| Source: PHYSICAL REVIEW LETTERS Volume: 80 Issue: 19 Pages: 4313-4316 Published: MAY 11 1998 |
| Times Cited: 659 References: 19 |
| Abstract: Extended electron spin precession in n-type GaAs bulk semiconductors is directly observed by femtosecond time-resolved Faraday rotation in the Voigt geometry. Synchronous optical pumping of the spin system amplifies and sustains spin motion, exposing a regime where spin lifetimes increase tenfold at low fields and exceed 100 ns at zero field. Precise studies in field and temperature provide clues to the relevant electron relaxation mechanisms, indicating a strong dependence on doping concentration. |
| Document Type: Article |
| Language: English |
| Reprint Address: Kikkawa, JM (reprint author), Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA |
Addresses:
1. Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA |
| Publisher: AMERICAN PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA |
| Subject Category: Physics, Multidisciplinary |
| IDS Number: ZM538 |
| ISSN: 0031-9007 |