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Injection and detection of a spin-polarized current in a light-emitting diode
Author(s): Fiederling R, Keim M, Reuscher G, Ossau W, Schmidt G, Waag A, Molenkamp LW
Source: NATURE    Volume: 402    Issue: 6763    Pages: 787-790    Published: DEC 16 1999  
Times Cited: 1,098     References: 16     
Abstract: The field of magnetoelectronics has been growing in practical importance in recent years(1). For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market(2). In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts(3,4), but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups(5,6) have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a nonmagnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.
Document Type: Article
Language: English
Reprint Address: Molenkamp, LW (reprint author), Univ Wurzburg, Inst Phys, EP 3, D-97074 Wurzburg, Germany
Addresses:
1. Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Publisher: MACMILLAN MAGAZINES LTD, PORTERS SOUTH, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Subject Category: Multidisciplinary Sciences
IDS Number: 266ZQ
ISSN: 0028-0836
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