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Magnetically engineered spintronic sensors and memory
Author(s): Parkin S, Jiang X, Kaiser C, Panchula A, Roche K, Samant M
Source: PROCEEDINGS OF THE IEEE    Volume: 91    Issue: 5    Pages: 661-680    Published: MAY 2003  
Times Cited: 132     References: 116     
Abstract: The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of magnetically engineered magnetic thin-film materials suitable for advanced magnetic sensors and magnetic random access memories. Magnetic sensors based on spin-valve giant magnetoresistive (GMR) sandwiches with artificial antiferromagnetic reference layers have resulted in enormous increases in the storage capacity of magnetic hard disk drives. The unique properties of magnetic tunnel junction (MTJ) devices has led to the development of an advanced high performance nonvolatile magnet random access memory: with density approaching that of dynamic random-access memory (RAM) and read-write speeds comparable to static RAM. Both GMR and MTJ devices are examples of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems. More complex devices, including three-terminal hot electron magnetic tunnel transistors, suggest that there are many other applications of spintronic materials.
Document Type: Review
Language: English
Reprint Address: Parkin, S (reprint author), IBM Corp, Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA
Addresses:
1. IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 345 E 47TH ST, NEW YORK, NY 10017-2394 USA
Subject Category: Engineering, Electrical & Electronic
IDS Number: 681LQ
ISSN: 0018-9219
DOI: 10.1109/JPROC.2003.811807
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