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| A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor |
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| Author(s): Liu AS, Jones R, Liao L, Samara-Rubio D, Rubin D, Cohen O, Nicolaescu R, Paniccia M |
| Source: NATURE Volume: 427 Issue: 6975 Pages: 615-618 Published: FEB 12 2004 |
| Times Cited: 464 References: 25 |
| Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics(1). One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III-V semiconductor compounds(2-6) and/or electro-optic materials such as lithium niobate(7-9). To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only similar to20 MHz (refs 10, 11), although it has been predicted theoretically that a similar to1-GHz modulation frequency might be achievable in some device structures(12,13). Here we describe an approach based on a metal-oxide-semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible. |
| Document Type: Article |
| Language: English |
| Reprint Address: Liu, AS (reprint author), Intel Corp, 2200 Miss Coll Blvd,CHP3-109, Santa Clara, CA 95054 USA |
Addresses:
1. Intel Corp, Santa Clara, CA 95054 USA
2. Intel Corp, IL-91031 Jerusalem, Israel |
| Publisher: NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND |
| Subject Category: Multidisciplinary Sciences |
| IDS Number: 773AJ |
| ISSN: 0028-0836 |
| DOI: 10.1038/nature02310 |
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