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Micrometre-scale silicon electro-optic modulator
Author(s): Xu QF, Schmidt B, Pradhan S, Lipson M
Source: NATURE    Volume: 435    Issue: 7040    Pages: 325-327    Published: MAY 19 2005  
Times Cited: 388     References: 29     
Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed(1-4). The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides(5-7), light emitters(8), amplifiers(9-11) and lasers(12,13) approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
Document Type: Article
Language: English
Reprint Address: Lipson, M (reprint author), Cornell Univ, Sch Elect & Comp Engn, 411 Phillips Hall, Ithaca, NY 14853 USA
Addresses:
1. Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
Publisher: NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Subject Category: Multidisciplinary Sciences
IDS Number: 927HM
ISSN: 0028-0836
DOI: 10.1038/nature03569
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