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| MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS |
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| Author(s): OHNO H, MUNEKATA H, PENNEY T, VONMOLNAR S, CHANG LL |
| Source: PHYSICAL REVIEW LETTERS Volume: 68 Issue: 17 Pages: 2664-2667 Published: APR 27 1992 |
| Times Cited: 597 References: 16 |
| Abstract: Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons. |
| Document Type: Article |
| Language: English |
| Reprint Address: OHNO, H (reprint author), IBM CORP, THOMAS J WATSON RES CTR, DIV RES, POB 218, YORKTOWN HTS, NY 10598 USA |
Addresses:
1. HOKKAIDO UNIV, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060 JAPAN |
| Publisher: AMERICAN PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA |
| Subject Category: Physics, Multidisciplinary |
| IDS Number: HQ440 |
| ISSN: 0031-9007 |
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