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SYNTHESIS AND CHARACTERIZATION OF NEARLY MONODISPERSE CDE (E = S, SE, TE) SEMICONDUCTOR NANOCRYSTALLITES
Author(s): MURRAY CB, NORRIS DJ, BAWENDI MG
Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY    Volume: 115    Issue: 19    Pages: 8706-8715    Published: SEP 22 1993  
Times Cited: 3,382     References: 48     
Abstract: A simple route to the production of high-quality CdE (E = S, Se, Te) semiconductor nanocrystallites is presented. Crystallites from approximately 12 angstrom to approximately 115 angstrom in diameter with consistent crystal structure, surface derivatization, and a high degree of monodispersity are prepared in a single reaction. The synthesis is based on the pyrolysis of organometallic reagents by injection into a hot coordinating solvent. This provides temporally discrete nucleation and permits controlled growth of macroscopic quantities of nanocrystallites. Size selective precipitation of crystallites from portions of the growth solution isolates samples with narrow size distributions (<5% rms in diameter). High sample quality results in sharp absorption features and strong ''band-edge' emission which is tunable with particle size and choice of material. Transmission electron microscopy and X-ray powder diffraction in combination with computer simulations indicate the presence of bulk structural properties in crystallites as small as 20 angstrom in diameter.
Document Type: Article
Language: English
Addresses:
1. MIT, DEPT CHEM, CAMBRIDGE, MA 02139 USA
Publisher: AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036
Subject Category: Chemistry, Multidisciplinary
IDS Number: LZ133
ISSN: 0002-7863
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