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Room-temperature spin memory in two-dimensional electron gases
Author(s): Kikkawa JM, Smorchkova IP, Samarth N, Awschalom DD
Source: SCIENCE    Volume: 277    Issue: 5330    Pages: 1284-1287    Published: AUG 29 1997  
Times Cited: 374     References: 20     
Abstract: Time-resolved Kerr reflectivity of two-dimensional electron gases in Il-VI semiconductors provides a direct measure of electron spin precession and relaxation over a temperature range from 4 to 300 kelvin. The introduction of n-type dopants increases the electronic spin lifetimes several orders of magnitude relative to insulating counterparts, a trend that is also observed in doped bulk semiconductors. Because the electronic spin polarization in these systems survives for nanoseconds, far longer than the electron-hole recombination lifetime, this technique reveals thousands of spin precession cycles of 15 gigahertz per tesla within an electron gas. Remarkably, these spin beats are only weakly temperature dependent and persist to room temperature.
Document Type: Article
Language: English
Addresses:
1. UNIV CALIF SANTA BARBARA, DEPT PHYS, SANTA BARBARA, CA 93106 USA
2. PENN STATE UNIV, DEPT PHYS, UNIVERSITY PK, PA 16802 USA
Publisher: AMER ASSOC ADVANCEMENT SCIENCE, 1200 NEW YORK AVE, NW, WASHINGTON, DC 20005
Subject Category: Multidisciplinary Sciences
IDS Number: XT827
ISSN: 0036-8075
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